近年来基于二维半导体的光电器件被广泛研究。虽然基于单层InSe的光电探测器表现出较高的响应度，但是其较低的载流子迁移率也限制了响应时间，约在秒量级。二维半导体的相互堆垛可以形成具有低缺陷态且空间均匀的范德华异质结构，是提高二维光电探测器性能的有效途径，因此2D材料范德华异质结的设计和研究为多功能，高性能电子和光电设备提供了巨大的机会。在本文中，通过在n型少层InSe上垂直堆叠p型Tellurene来构造垂直p-n结光电器件。基于异质结的光电探测器在暗场和光照下显示可调控的光响应，并在不同源漏电压下呈现整流比高达103。在栅压为0 V，不同源漏电压以及光功率100 μw下，运行1000 s，光响应不变，体现出很高的光电响应稳定性。

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